Amorphous chalcogenide inorganic resist.

Theoretical study of an amorphous chalcogenide surface

The structure of amorphous surfaces is a challenging frontier yet to be thoroughly explored. Standard surface characterization techniques like STM are difficult to apply to these surfaces. We have studied GeSe2 glass surfaces using first principle methods in a slab geometry. The glass surfaces are obtained by quenching a slab of an equilibrated liquid. We have found that these surfaces are well...

Digital Holographic Recording in Amorphous Chalcogenide Films

Laser-induced polarization-dependent photocrystallization of amorphous chalcogenide films

Irradiation of amorphous a-Se Ag I and a-Se films by linearly polarized He–Neand Arq ion-laser light was shown 70 15 15 to produce polycrystalline films with linear dichroism, the sign of which is determined by the polarization of the light. Photocrystallization of the films was confirmed by direct structural investigations. Thus, a new phenomenon, the effect of light polarization on the photoc...

Optical Dlts Measurements of Localized States in Amorphous Chalcogenide Semiconductors

New combined optical/thermal method (optical DLTS) for the investigation of gap states is presented. The concentration and energy distribution of the gap states have been studied. The optical DLTS signal S(T) vs. temperature is calculated from the photoconductivity decay I(t,T). The effective levels and density of states for amorphous Se and As2Se3 films were obtained. Introduction.Recently, th...

Polarization-dependent laser crystallization of Se-containing amorphous chalcogenide films

We report about the observation of influence of the light polarization on the photocrystallization process in the Se Ag I , elementary Se and Se Te films. Irradiation with linearly polarized He–Ne and Arq laser light results in the 70 15 15 80 20 Ž . formation of polycrystalline films with strong optical anisotropy dichroism , the sign of which is determined by the direction of the electrical v...